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We investigated the effects of using different thicknesses of pure and vanadium-doped thin films of TiO2 as the electron transport layer in the inverted configuration of organic photovoltaic cells based on poly (3-hexylthiophene) P3HT: [6-6] phenyl-(6) butyric acid methyl ester (PCBM). 1% vanadium-doped TiO2 nanoparticles were synthesized via the solvothermal method. Crystalline structure, morphology, and optical properties of pure and vanadium-doped TiO2 thin films were studied by different techniques such as x-ray diffraction, scanning electron microscopy, transmittance electron microscopy, and UV–visible transmission spectrum. The doctor blade method which is compatible with roll-2-roll printing was used for deposition of pure and vanadium-doped TiO2 thin films with thicknesses of 30 nm and 60 nm. The final results revealed that the best thickness of TiO2 thin films for our fabricated cells was 30 nm. The cell with vanadium-doped TiO2 thin film showed slightly higher power conversion efficiency and great Jsc of 10.7 mA/cm2 compared with its pure counterpart. In the cells using 60 nm pure and vanadium-doped TiO2 layers, the cell using the doped layer showed much higher efficiency. It is remarkable that the external quantum efficiency of vanadium-doped TiO2 thin film was better in all wavelengths
In recent years, polymer solar cells (PSCs) gained a lot of attention because of their superior characteristics such as mechanical flexibility, low cost, low environmental load, and their potential to be produced in large scale.[1–3] However, PSCs technology is not mature yet. PSCs, especially those with normal configuration, suffer from instability and low power conversion efficiency (PCE).[4] These photovoltaic cells have common problems in the PEDOTS:PSS layer. This layer is sensitive to ambient conditions and its acidic nature increases the degradation rate of the layer. Oxidation of low work function top metal oxide with the degradation of the PEDOT:PSS layer under UV illumination is another problem of the normal configuration of PSCs.[5–9] An inverted configuration is a common approach seeking to overcome the mentioned problems of PSCs.[3,9] In this structure, a buffer layer is inserted between the active layers and electrodes. Different n-type metal oxides such as ZnO[9–12] and TiO2,[13–15] alkali metal oxides like LiF[16] and Cs2CO3,[17,18] and in some cases ultra thin layers of Ca[19,20] are used as the electron-selective and hole-blocking layer in PSCs.
Special qualities of TiO2 cause it to be widely used in semiconductor industries such as OLEDs and organic photovoltaic cells. The TiO2 thin film has high electron mobility, great optical transparency, good physical and chemical stability; and as a nontoxic material, it can be produced in large scale inexpensively. Also, TiO2 has substantial oxygen and water protection because of photocatalysis combination and inherent oxygen deficiency.[21–23] Atomic layer deposition,[14,23] magnetron sputtering,[13,24] doctor blade method,[25] and spin coating[26] are some of the techniques used to fabricate TiO2 thin films. Some reports show that doping TiO2 can improve the performance of solar cells. For example, a Cs-doped TiO2 interlayer exhibited a power conversion efficiency of 4.2%, while pure thin films of TiO2 showed PCE of ∼ 2.4%.[9] Materials such as Al, Ga, and In were used as dopants in ZnO (ETLs) to enhance the electrical properties of the thin films and improve the PCE of cells.[27–30] Materials such as vanadium and niobium could be used as a dopant to improve the electrical properties of TiO2 as an electron transport layer. Vanadium has a resonant level within the conduction band of Ti and it can be used as a promising dopant to create a high density of free carriers.[31–34] In this study, we investigate cells using 1% vanadium-doped TiO2 thin films with different thicknesses and compare them with those using pure TiO2 thin films.
All chemicals were used as received without further purification. Titanium (IV) butoxide (TB, 97%), oleic acid (OA, 90%), and oleylamine (OM, 70%) were purchased from Sigma-Aldrich. Absolute ethanol (anhydrous, ACS, 94%–96%) and vanadium (V) oxytriethoxide (VO(OPr)3, 95%) were also purchased from Sigma-Aldrich. In this work, pure and vanadium-doped TiO2 nanoparticles (NPs) were prepared by the solvothermal method.[31] Typically, TB (2.27 ml, 6.7 mmol) and VO(OPr)3 (0.018 g, 1% V/Ti mole ratio) were added to a mixture of 10.57 ml (33.3 mmol) OA, 10.97 ml (33.3 mmol) OM, 5.84 ml (100 mmol) absolute ethanol, and 0.67 ml (36.7 mmol) deionized (DI) water. The obtained mixture was stirred under argon atmosphere for 10 min before being transferred into a 50 mL Teflon-lined stainless steel autoclave. The system was then heated at 180 °C for 24 h. The obtained precipitates were separated by centrifugation (5000 rpm, 15 min) and washed several times with ethanol and then dried at room temperature. The solvothermal synthesized vanadium-doped TiO2 NPs' products were dispersed in ethanol with different ratios. The procedure of this synthesis is summarized in Fig.
Fabrication of solar cells began with ultrasonic cleansing of ITO-coated glass in acetone and isopropanol for 30 min. Afterward for electron transport layer deposition, 10% and 40% stable solutions of pure and vanadium-doped TiO2 NPs were dissolved in 2-methoxy ethanol to be deposited using doctor blade method (4 samples with the thicknesses of 30 and 60 nm, respectively).[12] In the next step, 100 μL of the mentioned solutions was injected into the substrate. Finally, deposition started with a speed of 40 mm/s on the heated substrate (65 °C). In order to prepare the active layer of the cells, we dissolved P3HT and PCBM in chlorobenzene separately. A 60 °C hot plate was used for stirring the dissolved solutions overnight. At a weight ratio of 1:0.9 we blended the solutions. Afterward we used the 60 °C hot plate to stir the solutions again. The active layer was deposited on the electron transport layer in air via doctor blade method at a speed of 30 mm/s and the temperature of 60 °C. Then the thin layer of PEDOT: PSS was deposited on the active layer with a speed of 15 mm/s and the temperature of 60 °C as the hole transport layer (HTL). Inert atmosphere annealing on a hot plate at 140 °C was employed for 5 min. Thermal evaporation at ∼ 510−6 mbar and a shadow mask were used to deposit the Ag electrode. The structure of the cells is shown in Fig.
The structures of pure and vanadium-doped TiO2 thin film NPs were analyzed using x-ray diffraction (XRD, Model Philips MPD PW 3040) over the 2θ range of 20°–80° at the scan rate of 0.02°/s. The surface morphology of pure and vanadium-doped TiO2 thin film NPs was examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The optical properties of the thin films were investigated using a UV–VIS–IR (Perkin-Elmer-950 lambda) spectrometer. The current density–voltage characteristics of the cells were measured under AM 1.5 illumination provided by Oriel Sol 1A solar simulator.
The crystalline structure of pure and vanadium-doped TiO2 thin films NPs was investigated by XRD. Figure
The surface morphology of TiO2 thin film NPs is depicted in Figs.
Optical properties of pure and vanadium-doped TiO2 thin films with the thickness of 30 nm were measured by a UV–Vis–IR spectrometer, as shown in Fig.
The visible light transmittance decreases for pure TiO2 thin film. Thus, the pure TiO2 thin film shows lower transmittance than the doped thin film. According to the SEM images, better transmittance might be due to the surface morphology and crystallinity of the thin film.[36–38] The energy band gap of pure and vanadium-doped TiO2 thin film NPs is determined using the Tauc formula
Figure
Employing vanadium-doped TiO2 thin film NPs as the electron transport layer was effective and it improved the optical and electrical performance of the cells. Best thickness of our pure and vanadium-doped thin films was 30 nm. The cell using 30 nm vanadium-doped TiO2 thin films achieved 3.68% power conversion efficiency with Jsc of 10.7 mA/cm2 and Voc of 0.553. The fill factor of this cell was 62.36%. This somehow shows that at higher thicknesses, increase of series resistance causes a loss in power conversion efficiency and in lower thicknesses while the series resistance is low, but the lack of good interfacial area with active layer prevents the cell from having higher performances and this puts a higher power conversion efficiency limit in the thickness of 30 nm thin films; also lower fill factor is another criterion affecting the performance of cell. So we suggest using other forms of vanadium-doped TiO2, like nanorods and nanotubes.
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